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triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1 TGF2961-SD august 2007 ? rev a datasheet subject to change without notice. primary applications product description key features 900 mhz application board performance 1 watt dc-4 ghz packaged hfet bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v typical ? package dimensions: 4.5 x 4 x 1.5 mm ? bias: vd = 8 v, id = 200 ma, vg = -1.0 v (typical) ? input return loss: -15 db ? output return loss: -7 db ? toi: 44 dbm ? 31 dbm psat, 30 dbm p1db ? gain: 18 db ? frequency range: dc-4 ghz nominal 900 mhz application board performance: ? rfid ? cellular base stations ? wimax ? wireless infrastructure ? if & lo buffer applications the TGF2961-SD is a high performance 1-watt heterojunction gaas field effect transistor (hfet) housed in a low cost sot89 surface mount package. the device?s ideal operating point is at a drain bi as of 8 v and 200 ma. at this bias at 900 mhz when matched into 50 ohms using external components, this device is capable of 18 db of gain, 30 dbm of saturated output power, and 44 dbm of output ip3 evaluation boards at 900 mhz, 1900 mhz and 2100 mhz available on request. rohs and lead-free compliant 29 30 31 0.86 0.87 0.88 0.89 0.9 0.91 0.92 0.93 0.94 0.95 0.96 0.97 freq (ghz) psat (dbm) 5 10 15 20 0.6 0.7 0.8 0.9 1 1.1 1.2 frequency (ghz) gain (db) -20 -15 -10 -5 0 5 10 15 20 irl and orl (db) gain irl orl
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 2 TGF2961-SD august 2007 ? rev a table ii recommended operating conditions table i absolute maximum ratings 1/ 2/ 29 dbm input continuous wave power pin -2.4 to 17.8 ma gate current range ig 2/ 780 ma drain current id -5 to 0 v gate voltage range vg 2/ 9 v drain voltage vd 17 v drain to gate voltage vd-vg notes value parameter symbol 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device and / or affect device lifetime. these are stress ratings only, an d functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current, i nput power, and output power shall not exceed the maximum power dissipation listed in table iv. -1.0 v gate voltage vg 260 ma drain current at psat id 200 ma drain current idq 8 v drain voltage vd typical value parameter 1/ symbol 1/ see assembly diagram for bias instructions.
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 3 TGF2961-SD august 2007 ? rev a table iii rf characterization table db dbm dbm dbm db db db units 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ 1/ 2/ 3/ notes 3.3 4.3 4.3 900 mhz 1900 mhz 2100 mhz noise figure nf 44 44 44 900 mhz 1900 mhz 2100 mhz output toi toi 29.5 30 30 900 mhz 1900 mhz 2100 mhz output power @ 1db compression p1db 30.5 31 31 900 mhz 1900 mhz 2100 mhz saturated output power psat -6 -6 -6 900 mhz 1900 mhz 2100 mhz output return loss orl -15 -15 -15 900 mhz 1900 mhz 2100 mhz input return loss irl 18 15 15 900 mhz 1900 mhz 2100 mhz small signal gain gain nominal test conditions parameter symbol bias: vd = 8 v, idq = 200 ma, vg = -1.0 v, typical 1/ using 900 mhz application board. 2/ using 1900 mhz application board 3/ using 2100 mhz application board
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 4 TGF2961-SD august 2007 ? rev a table iv power dissipation and thermal properties -65 to 150c storage temperature see ?typical solder reflow profiles? table mounting temperature jc = 39 (c/w) tchannel = 127c tm = 2.27e+09 hrs vd = 8 v id = 260 ma pout = 30 dbm pd = 1.08 w tbaseplate = 85c thermal resistance, jc under rf drive jc = 39 (c/w) tchannel = 147c tm = 1.86e+08 hrs vd = 8 v id = 200 ma pd = 1.6 w tbaseplate = 85c thermal resistance, jc 1/ 2/ pd = 2.7 w tchannel = 175c tm = 8.7e+06 hrs tbaseplate = 70c maximum power dissipation notes value test conditions parameter 1/ for a median life of 8.7e6 hours, power dissipat ion is limited to pd(max) = (175c ? tbasec) / jc 2/ channel operating temperature will directly affec t the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. power de-rating curve 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 175 200 baseplate temp (c) power dissipated (w) tm=8.7e6 hrs
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 5 TGF2961-SD august 2007 ? rev a 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 freq (ghz) gmax and msg - db 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 k factor gmax max stable gain k factor gmax, max stable gain, k factor bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 6 TGF2961-SD august 2007 ? rev a measured data 900 mhz application board bias conditions: vd = 8 v, id = 200 ma, vg = -1.0 v t ypical 10 15 20 25 0.6 0.7 0.8 0.9 1 1.1 1.2 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 0.6 0.7 0.8 0.9 1 1.1 1.2 frequency (ghz) irl and orl (db) irl orl
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 7 TGF2961-SD august 2007 ? rev a bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 28 29 30 31 0.86 0.88 0.90 0.92 0.94 freq (ghz) p1db (dbm) -40 deg c 25 deg c 85 deg c 29 30 31 32 0.82 0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98 1.00 freq (ghz) psat (dbm) -40 deg c +25 deg c +85 deg c measured data 900 mhz application board
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 8 TGF2961-SD august 2007 ? rev a measured data 900 mhz application board bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 43 44 45 46 0.86 0.87 0.88 0.89 0.9 0.91 0.92 0.93 0.94 0.95 0.96 0.97 freq(ghz) oip3(dbm)
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 9 TGF2961-SD august 2007 ? rev a measured data 1900 mhz application board bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 5 10 15 20 1.7 1.8 1.9 2 2.1 2.2 2.3 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 1.7 1.8 1.9 2 2.1 2.2 2.3 frequency (ghz) irl and orl (db) irl orl
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 10 TGF2961-SD august 2007 ? rev a bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical measured data 1900 mhz application board 28 29 30 31 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 freq (ghz) p1db (dbm) -40 deg c 25 deg c 85 deg c 29 30 31 32 1.88 1.90 1.92 1.94 1.96 1.98 2.00 2.02 2.04 freq (ghz) psat (dbm) -40 deg c +25 deg c +85 deg c
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 11 TGF2961-SD august 2007 ? rev a measured data 1900 mhz application board bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 43 44 45 46 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 freq(ghz) oip3(dbm)
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 12 TGF2961-SD august 2007 ? rev a measured data 2100 mhz application board bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 5 10 15 20 1.9 2 2.1 2.2 2.3 2.4 2.5 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 1.9 2 2.1 2.2 2.3 2.4 2.5 frequency (ghz) irl and orl (db) irl orl
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 13 TGF2961-SD august 2007 ? rev a bias conditions: vd = 8 v, id = 200 ma, vg = -1.0 v t ypical measured data 2100 mhz application board 28 29 30 31 2.06 2.08 2.10 2.12 2.14 2.16 2.18 2.20 2.22 freq (ghz) p1db (dbm) -40 deg c 25 deg c 85 deg c 29 30 31 32 2.06 2.08 2.10 2.12 2.14 2.16 2.18 2.20 2.22 freq (ghz) psat (dbm) -40 deg c +25 deg c +85 deg c
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 14 TGF2961-SD august 2007 ? rev a measured data 2100 mhz application board bias conditions: vd = 8 v, idq = 200 ma, vg = -1.0 v t ypical 43 44 45 46 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 freq(ghz) oip3 (dbm)
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 15 TGF2961-SD august 2007 ? rev a electrical schematic bias procedures 1 2 3 2 bias-up procedure vg set to -2.5 v vd set to +8 v adjust vg more positive until idq is 200 ma. this w ill be ~ vg = -1.0 v apply rf signal to input bias-down procedure turn off rf signal at input reduce vg to -2.5v. ensure id ~ 0 ma turn vd to 0 v turn vg to 0 v rf out (drain) 3 gnd (source) 2 rf in (gate) 1 signal pin
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 16 TGF2961-SD august 2007 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. mechanical drawing a b c d e f g h j j i k 1 2 3 2 3 2 1 1.83 1.50 k 0.48 0.36 j 0.56 0.44 i 1.20 0.89 h 0.44 0.35 g 1.50 center-center f 3.00 center-center e 4.25 3.94 d 2.60 2.29 c 4.60 4.40 b 1.60 1.40 a max min millimeters dim
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 17 TGF2961-SD august 2007 ? rev a evaluation board gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. evaluation board schematic l2 r1 l1 r2 c1 c3 c4 q1 rf out c2 l3 rf in vg vd gnd c5 c7 c9 c10 c8 c6 d / q1 d / r2 l1 c3 c6 c10 c8 c5 vd vg rf in c4 rf out c2 c1 c7 c9 l3 l2 r1 z = 50 0 z = 50 0 evaluation board
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 18 TGF2961-SD august 2007 ? rev a gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. physical location for c2 5.2 mm 8.0 mm 18.8 mm d 50 ohm transmission line length d 23 o @2.1 ghz 33 o @1.9 ghz 36 o @0.9 ghz ? triquint TGF2961-SD packaged fet -- q1 28 mil thick getek -- (pcb) 0805 1/8 watt resistor 3 ohm r2 0603 capacitor 0.01 ? f c7, c8 0805 1/8 watt resistor 50 ohm r1 0603 capacitor 150 pf c3,c4 0603 capacitor 0.1 ? f c5, c6 0603 capacitor 1000 pf c9, c10 0805 inductor 50 nh l2, l3 0603 accu-p avx capacitor 1.2 pf 1.2 pf 1.8 pf c2 0603 accu-p avx capacitor 0603 accu-l avx inductor description 1.2 pf 1.2 nh 1900 0.9 pf 1.2 nh 2100 8.2 pf c1 5.6 nh l1 900 value for freq (mhz) ref des evaluation board bill of materials
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 19 TGF2961-SD august 2007 ? rev a 1/ the lowest possible thermal and electrical resistan ce for pin 2 is critical for optimal performance. th e array of vias under pin 2 should be as small and as dense as the pc board fabrication permits. 0.30 mm diam eter vias on 0.60 mm center to center spacing is recomme nded. 2/ mounting screws in the vicinity of the package impr ove heat transfer to the chassis or to a heat sprea der located on the backside of the pc board. shown are clearance holes and solder mask keepout zone for a 2 - 56 socket head cap screw. use of a split lockwasher and proper torque on the screw will prevent compression damage to the pc board. 3/ use of 1 oz copper (min) in the pc board constructi on is recommended. 4/ for lowest thermal resistance, solder mask must be removed where the copper traces on the pc board contact the heat spreader. in this example, this wo uld be a) front and backsides of the pc board aroun d the 2-56 screw and b) front of the pc board around pack age pin 2. gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram 2.6 mm ? clearance hole for 2-56 socket head cap screw (2/) 4.6 mm ? soldermask keepout for 2-56 lockwasher (4/) sot-89 package outline array of vias (1/) 7.6 x 7.6 mm copper area (3/) 1 2 3 assembly notes
triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 20 TGF2961-SD august 2007 ? rev a ordering information part package style TGF2961-SD, tape and reel sot-89, tape and reel recommended surface mount package assembly proper esd precautions must be followed while handl ing packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow ove n vendors? recommendations when developing a solder re flow profile. typical solder reflow profiles are l isted in the table below. hand soldering is not recommended. solder paste ca n be applied using a stencil printer or dot placeme nt. the volume of solder paste depends on pcb and compo nent layout and should be well controlled to ensure consistent mechanical and electrical perform ance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec

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